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SI1557DH-T1-E3

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SI1557DH-T1-E3

MOSFET N/P-CH 12V 1.2A SC70-6

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI1557DH-T1-E3 is a complementary N-channel and P-channel MOSFET array designed for efficient power switching. This device features a 12V drain-source breakdown voltage and supports continuous drain currents of 1.2A for the N-channel and 770mA for the P-channel, both at 25°C. The low on-resistance of 235mOhm at 1.2A and 4.5V gate-source voltage, coupled with a logic level gate, ensures optimized performance in low-voltage applications. With a maximum power dissipation of 470mW and a gate charge of 1.2nC at 4.5V, it is suitable for power management in portable electronics and battery-powered devices. The SC-70-6 (SOT-363) surface-mount package and an operating temperature range of -55°C to 150°C make it a versatile component for demanding environments.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max470mW
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C1.2A, 770mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs235mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.2nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 100µA
Supplier Device PackageSC-70-6

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