SI1557DH-T1-E3
MOSFET N/P-CH 12V 1.2A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1557DH-T1-E3 is a complementary N-channel and P-channel MOSFET array designed for efficient power switching. This device features a 12V drain-source breakdown voltage and supports continuous drain currents of 1.2A for the N-channel and 770mA for the P-channel, both at 25°C. The low on-resistance of 235mOhm at 1.2A and 4.5V gate-source voltage, coupled with a logic level gate, ensures optimized performance in low-voltage applications. With a maximum power dissipation of 470mW and a gate charge of 1.2nC at 4.5V, it is suitable for power management in portable electronics and battery-powered devices. The SC-70-6 (SOT-363) surface-mount package and an operating temperature range of -55°C to 150°C make it a versatile component for demanding environments.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 470mW |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A, 770mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 1.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Supplier Device Package | SC-70-6 |
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