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SI1555DL-T1-E3

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SI1555DL-T1-E3

MOSFET N/P-CH 20V/8V 0.66A SC70

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® MOSFET Array SI1555DL-T1-E3. This N- and P-channel device features a Drain-to-Source Voltage (Vdss) of 20V for the N-channel and 8V for the P-channel. It offers a continuous drain current (Id) of 660mA for the N-channel and 570mA for the P-channel at 25°C. With a maximum power dissipation of 270mW and low Rds(On) of 385mOhm at 660mA, 4.5V, this MOSFET array is suitable for applications requiring efficient switching. Key parameters include a logic level gate, gate charge (Qg) of 1.2nC at 4.5V, and a threshold voltage (Vgs(th)) of 1.4V at 250µA. The device is packaged in an SC-70-6 (SOT-363) surface-mount configuration and supplied on a tape and reel. This component is commonly utilized in portable electronics and battery-powered devices.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max270mW
Drain to Source Voltage (Vdss)20V, 8V
Current - Continuous Drain (Id) @ 25°C660mA, 570mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.2nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device PackageSC-70-6

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