SI1555DL-T1-E3
MOSFET N/P-CH 20V/8V 0.66A SC70Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array SI1555DL-T1-E3. This N- and P-channel device features a Drain-to-Source Voltage (Vdss) of 20V for the N-channel and 8V for the P-channel. It offers a continuous drain current (Id) of 660mA for the N-channel and 570mA for the P-channel at 25°C. With a maximum power dissipation of 270mW and low Rds(On) of 385mOhm at 660mA, 4.5V, this MOSFET array is suitable for applications requiring efficient switching. Key parameters include a logic level gate, gate charge (Qg) of 1.2nC at 4.5V, and a threshold voltage (Vgs(th)) of 1.4V at 250µA. The device is packaged in an SC-70-6 (SOT-363) surface-mount configuration and supplied on a tape and reel. This component is commonly utilized in portable electronics and battery-powered devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 20V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 660mA, 570mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 660mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | SC-70-6 |
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