SI1553DL-T1-GE3
MOSFET N/P-CH 20V 0.66A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix MOSFET N/P-CH 20V 0.66A SC70-6, part number SI1553DL-T1-GE3, is a TrenchFET® series power MOSFET array. This device features both N-channel and P-channel configurations within a compact SC-70-6 surface mount package. It offers a continuous drain current of 660mA for the N-channel and 410mA for the P-channel, with a maximum drain-to-source voltage (Vdss) of 20V. The SI1553DL-T1-GE3 is designed with logic-level gate drive capability, simplifying integration with lower voltage controllers. Key electrical characteristics include a maximum on-resistance (Rds On) of 385mOhm at 660mA and 4.5V for the N-channel, and a maximum power dissipation of 270mW. This component finds application in power management circuits, battery-powered devices, and portable electronics. The device operates across a temperature range of -55°C to 150°C and is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 660mA, 410mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 660mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | SC-70-6 |