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SI1553DL-T1-E3

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SI1553DL-T1-E3

MOSFET N/P-CH 20V 0.66A SC70-6

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI1553DL-T1-E3 is a MOSFET array featuring N-channel and P-channel configurations. This device offers a Drain-Source Voltage (Vdss) of 20V and continuous drain currents of 660mA for the N-channel and 410mA for the P-channel at 25°C. The array boasts a low Rds(on) of 385mOhm at 660mA and 4.5V Vgs, coupled with a logic-level gate for enhanced drive flexibility. With a maximum power dissipation of 270mW and a compact SC-70-6 (SOT-363) surface-mount package, it is suitable for applications requiring efficient power switching in confined spaces. The operating temperature range is -55°C to 150°C. This component is commonly utilized in portable electronics and power management solutions.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max270mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C660mA, 410mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.2nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id600mV @ 250µA (Min)
Supplier Device PackageSC-70-6

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