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SI1551DL-T1-GE3

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SI1551DL-T1-GE3

MOSFET N/P-CH 20V SC70-6

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® MOSFET Array SI1551DL-T1-GE3 is a P-channel and N-channel device featuring a 20V drain-to-source voltage rating. This surface mount component, packaged in an SC-70-6 (SOT-363) on tape and reel, offers a maximum continuous drain current of 290mA for the N-channel and 410mA for the P-channel, both at 25°C. Its low on-resistance of 1.9 Ohm maximum at 290mA and 4.5V gate-source voltage, coupled with a logic level gate feature, makes it suitable for power management applications. The device operates across a wide temperature range of -55°C to 150°C. The SI1551DL-T1-GE3 is commonly utilized in portable electronics and consumer devices.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max270mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C290mA, 410mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs1.9Ohm @ 290mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-70-6

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