SI1551DL-T1-GE3
MOSFET N/P-CH 20V SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array SI1551DL-T1-GE3 is a P-channel and N-channel device featuring a 20V drain-to-source voltage rating. This surface mount component, packaged in an SC-70-6 (SOT-363) on tape and reel, offers a maximum continuous drain current of 290mA for the N-channel and 410mA for the P-channel, both at 25°C. Its low on-resistance of 1.9 Ohm maximum at 290mA and 4.5V gate-source voltage, coupled with a logic level gate feature, makes it suitable for power management applications. The device operates across a wide temperature range of -55°C to 150°C. The SI1551DL-T1-GE3 is commonly utilized in portable electronics and consumer devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 290mA, 410mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 290mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-70-6 |