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SI1551DL-T1-E3

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SI1551DL-T1-E3

MOSFET N/P-CH 20V SC70-6

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix presents the SI1551DL-T1-E3, a TrenchFET® MOSFET array featuring both N-channel and P-channel configurations. This device offers a 20V drain-to-source voltage capability with continuous drain currents of 290mA for the N-channel and 410mA for the P-channel at 25°C. The SI1551DL-T1-E3 boasts a low Rds(On) of 1.9 Ohm at 290mA and 4.5V Vgs, and a logic level gate feature for efficient operation with low voltage control signals. With a maximum power dissipation of 270mW and a gate charge of 1.5nC at 4.5V Vgs, it is suitable for power management applications. The component is housed in a compact SC-70-6 (SOT-363) package, surface mounted and supplied on tape and reel. This Vishay Siliconix MOSFET array is utilized in various applications including battery-powered devices, portable electronics, and power switching circuits.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max270mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C290mA, 410mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs1.9Ohm @ 290mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-70-6

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