SI1539DL-T1-GE3
MOSFET N/P-CH 30V 0.54A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1539DL-T1-GE3 is a MOSFET array featuring complementary N-channel and P-channel devices in a 30V breakdown voltage rating. This component offers a continuous drain current of 540mA for the N-channel and 420mA for the P-channel at 25°C, with a maximum on-resistance of 480mOhm at 590mA and 10V Vgs. The device is designed with logic-level gate drive capability. Its low input capacitance (Ciss) and gate charge (Qg) of 1.4nC at 10V Vgs contribute to efficient switching performance. Supplied in a compact SC-70-6 (SOT-363) surface-mount package, this array is suitable for applications requiring space-constrained power management solutions within the consumer electronics and industrial automation sectors. The device operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 540mA, 420mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 590mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | SC-70-6 |
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