SI1539DL-T1-E3
MOSFET N/P-CH 30V 0.54A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET N/P-CH 30V 0.54A SC70-6, part number SI1539DL-T1-E3, is a dual MOSFET array featuring N-channel and P-channel configurations. This device is designed for surface mount applications and is supplied in a Tape & Reel (TR) package. It offers a continuous drain current of 540mA for the N-channel and 420mA for the P-channel at 25°C. The drain-to-source voltage (Vdss) is 30V. Key electrical characteristics include a maximum on-resistance (Rds On) of 480mOhm at 590mA and 10V for the N-channel, and a maximum power dissipation of 270mW. The component features a logic level gate for compatibility with lower voltage control signals. This MOSFET array is suitable for use in power management and switching applications across various industries, including consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 270mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 540mA, 420mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 590mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | SC-70-6 |
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