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SI1539DDL-T1-GE3

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SI1539DDL-T1-GE3

MOSFET N/P-CH 30V 0.7A SC70-6

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix SI1539DDL-T1-GE3 is a TrenchFET® MOSFET array featuring both N-channel and P-channel devices in a 6-TSSOP, SC-88, SOT-363 (SC-70-6) package. This surface mount component offers a 30V drain-to-source voltage rating. The continuous drain current at 25°C is 700mA for the N-channel and 460mA for the P-channel, with a maximum power dissipation of 340mW. Key electrical characteristics include a maximum Rds(on) of 388mOhm at 600mA, 10V for the N-channel and 1.07 Ohm at 400mA, 10V for the P-channel. Gate charge (Qg) is rated at 1.1nC and 1.2nC respectively, both at 4.5V. Input capacitance (Ciss) is a maximum of 28pF and 21pF, each at 15V. The device operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in consumer electronics, industrial control, and power management.

Additional Information

Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max340mW
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C700mA (Tc), 460mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds28pF @ 15V, 21pF @ 15V
Rds On (Max) @ Id, Vgs388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V
Gate Charge (Qg) (Max) @ Vgs1.1nC @ 4.5V, 1.2nC @ 4.5V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 250µA, 3V @ 250µA
Supplier Device PackageSC-70-6

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