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SI1035X-T1-GE3

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SI1035X-T1-GE3

MOSFET N/P-CH 20V SC89

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix SI1035X-T1-GE3 is a TrenchFET® MOSFET array featuring N and P-channel configurations. This device offers a 20V drain-source voltage and continuous drain currents of 180mA for the N-channel and 145mA for the P-channel at 25°C. The array is designed for space-constrained applications, utilizing a compact SC-89 (SOT-563F) surface-mount package. Key specifications include a low Rds(on) of 5 Ohms maximum at 200mA and 4.5V Vgs, and a low gate charge of 0.75nC maximum at 4.5V Vgs, indicating efficient switching performance. The logic-level gate feature simplifies driving requirements. With a maximum power dissipation of 250mW and an operating temperature range of -55°C to 150°C, this component is suitable for use in portable electronics, battery management, and power switching applications. It is supplied in tape and reel packaging.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max250mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C180mA, 145mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id400mV @ 250µA (Min)
Supplier Device PackageSC-89 (SOT-563F)

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Vishay Siliconix - SI1035X-T1-GE3 - Microchip USA