SI1035X-T1-GE3
MOSFET N/P-CH 20V SC89Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI1035X-T1-GE3 is a TrenchFET® MOSFET array featuring N and P-channel configurations. This device offers a 20V drain-source voltage and continuous drain currents of 180mA for the N-channel and 145mA for the P-channel at 25°C. The array is designed for space-constrained applications, utilizing a compact SC-89 (SOT-563F) surface-mount package. Key specifications include a low Rds(on) of 5 Ohms maximum at 200mA and 4.5V Vgs, and a low gate charge of 0.75nC maximum at 4.5V Vgs, indicating efficient switching performance. The logic-level gate feature simplifies driving requirements. With a maximum power dissipation of 250mW and an operating temperature range of -55°C to 150°C, this component is suitable for use in portable electronics, battery management, and power switching applications. It is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 180mA, 145mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 400mV @ 250µA (Min) |
| Supplier Device Package | SC-89 (SOT-563F) |
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