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SI1034X-T1-GE3

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SI1034X-T1-GE3

MOSFET 2N-CH 20V 0.18A SC89

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI1034X-T1-GE3 is a dual N-channel MOSFET array designed for efficient power switching. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 180mA at 25°C. The device offers a low on-resistance (Rds On) of 5 Ohm maximum at 200mA and 4.5V Vgs, with a gate charge (Qg) of 0.75nC maximum at 4.5V. The logic-level gate threshold voltage (Vgs(th)) is 1.2V maximum at 250µA, facilitating operation with lower gate drive voltages. With a maximum power dissipation of 250mW and an operating temperature range of -55°C to 150°C, it is suitable for applications in consumer electronics and industrial control systems. The SI1034X-T1-GE3 is supplied in a compact SC-89 (SOT-563F) surface mount package on tape and reel.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max250mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C180mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageSC-89 (SOT-563F)

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