SI1034X-T1-GE3
MOSFET 2N-CH 20V 0.18A SC89Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1034X-T1-GE3 is a dual N-channel MOSFET array designed for efficient power switching. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 180mA at 25°C. The device offers a low on-resistance (Rds On) of 5 Ohm maximum at 200mA and 4.5V Vgs, with a gate charge (Qg) of 0.75nC maximum at 4.5V. The logic-level gate threshold voltage (Vgs(th)) is 1.2V maximum at 250µA, facilitating operation with lower gate drive voltages. With a maximum power dissipation of 250mW and an operating temperature range of -55°C to 150°C, it is suitable for applications in consumer electronics and industrial control systems. The SI1034X-T1-GE3 is supplied in a compact SC-89 (SOT-563F) surface mount package on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 180mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |