SI1034X-T1-E3
MOSFET 2N-CH 20V 0.18A SC89Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1034X-T1-E3 is a dual N-channel MOSFET array with a 20V drain-source breakdown voltage. Designed for surface mounting in the SC-89 (SOT-563F) package, this component offers a continuous drain current of 180mA at 25°C and a maximum power dissipation of 250mW. The MOSFETs feature a logic-level gate drive, requiring a Vgs(th) of 1.2V maximum at 250µA. With a typical Rds On of 5 Ohms at 200mA and 4.5V, and a gate charge of 0.75nC maximum at 4.5V, the SI1034X-T1-E3 is suitable for applications within the consumer electronics and industrial automation sectors requiring efficient switching and low-power control. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 180mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
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