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SI1034X-T1-E3

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SI1034X-T1-E3

MOSFET 2N-CH 20V 0.18A SC89

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI1034X-T1-E3 is a dual N-channel MOSFET array with a 20V drain-source breakdown voltage. Designed for surface mounting in the SC-89 (SOT-563F) package, this component offers a continuous drain current of 180mA at 25°C and a maximum power dissipation of 250mW. The MOSFETs feature a logic-level gate drive, requiring a Vgs(th) of 1.2V maximum at 250µA. With a typical Rds On of 5 Ohms at 200mA and 4.5V, and a gate charge of 0.75nC maximum at 4.5V, the SI1034X-T1-E3 is suitable for applications within the consumer electronics and industrial automation sectors requiring efficient switching and low-power control. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max250mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C180mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageSC-89 (SOT-563F)

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