SI1033X-T1-E3
MOSFET 2P-CH 20V 0.145A SC89Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1033X-T1-E3 is a dual P-channel MOSFET array designed for space-constrained applications. This component features a 20V drain-source voltage rating and a continuous drain current capability of 145mA at 25°C. The 8 Ohm maximum Rds(on) at 150mA and 4.5V gate-source voltage, coupled with a logic-level gate, ensures efficient switching performance. With a gate charge of 1.5nC at 4.5V, it is suitable for power management in portable electronics, battery-powered devices, and automotive control systems. The device is supplied in a compact SC-89 (SOT-563F) surface-mount package, enabling high component density. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 145mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 150mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
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