SI1029X-T1-E3
MOSFET N/P-CH 60V 0.305A SC89Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI1029X-T1-E3 is a TrenchFET® N-channel and P-channel MOSFET array. This component features a 60V drain-source breakdown voltage and offers a continuous drain current of 305mA for the N-channel and 190mA for the P-channel at 25°C. With a low on-resistance of 1.4 Ohm maximum at 500mA and 10V, and a logic-level gate, this device is suitable for power management applications. Its small SC-89 (SOT-563F) package and surface mount type make it ideal for compact designs in industries such as consumer electronics and industrial automation. The device operates within a temperature range of -55°C to 150°C and is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 305mA, 190mA |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 25V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
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