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SI1028X-T1-GE3

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SI1028X-T1-GE3

MOSFET 2N-CH 30V SC89

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI1028X-T1-GE3 is a dual N-channel MOSFET array designed for power management applications. This component features a 30V drain-to-source voltage (Vdss) and a low on-resistance of 650mOhm maximum at 500mA and 10V gate-source voltage (Vgs). The logic-level gate design ensures compatibility with lower voltage control signals. With a maximum power dissipation of 220mW and a junction temperature range of -55°C to 150°C, it is suitable for compact designs. The SC-89 (SOT-563F) package facilitates surface mounting. Industries leveraging this technology include automotive and consumer electronics.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max220mW
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Input Capacitance (Ciss) (Max) @ Vds16pF @ 15V
Rds On (Max) @ Id, Vgs650mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs2nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSC-89 (SOT-563F)

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