SI1026X-T1-E3
MOSFET 2N-CH 60V 0.305A SC89Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI1026X-T1-E3 is a dual N-channel MOSFET array designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 305mA at 25°C. The device offers a low Rds On of 1.4 Ohms maximum at 500mA and 10V, with a logic level gate for enhanced control. Key electrical characteristics include a maximum gate charge (Qg) of 0.6nC at 4.5V and a maximum input capacitance (Ciss) of 30pF at 25V. With a maximum power dissipation of 250mW and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for use in consumer electronics, industrial controls, and battery-powered devices. The supplier device package is SC-89 (SOT-563F), supplied in Tape & Reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 305mA |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 25V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
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