SI1025X-T1-E3
MOSFET 2P-CH 60V 0.19A SC89Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1025X-T1-E3 is a dual P-channel MOSFET array designed for surface-mount applications. This component offers a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 190mA at 25°C. Key electrical parameters include a maximum on-resistance (Rds On) of 4Ohm at 500mA and 10V, and a gate charge (Qg) of 1.7nC maximum at 15V. With a power dissipation of 250mW and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for use in consumer electronics and industrial automation. The device utilizes advanced TrenchFET technology and comes in a compact SC-89 (SOT-563F) package, supplied on tape and reel. Its logic-level gate feature facilitates lower drive voltages.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 190mA |
| Input Capacitance (Ciss) (Max) @ Vds | 23pF @ 25V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 15V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
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