SI1024X-T1-E3
MOSFET 2N-CH 20V 485MA SC89Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI1024X-T1-E3 is a dual N-channel MOSFET array in an SC-89 (SOT-563F) package. This device offers a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 485mA at 25°C. The Rds(On) is specified at a maximum of 700mOhm at 600mA and 4.5V Vgs. Featuring a logic-level gate, this component has a gate charge (Qg) of 0.75nC at 4.5V. The power dissipation is rated at 250mW, and it operates across a temperature range of -55°C to 150°C. This Vishay Siliconix MOSFET array is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 485mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
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