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SI1024X-T1-E3

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SI1024X-T1-E3

MOSFET 2N-CH 20V 485MA SC89

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI1024X-T1-E3 is a dual N-channel MOSFET array in an SC-89 (SOT-563F) package. This device offers a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 485mA at 25°C. The Rds(On) is specified at a maximum of 700mOhm at 600mA and 4.5V Vgs. Featuring a logic-level gate, this component has a gate charge (Qg) of 0.75nC at 4.5V. The power dissipation is rated at 250mW, and it operates across a temperature range of -55°C to 150°C. This Vishay Siliconix MOSFET array is suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max250mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C485mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id900mV @ 250µA
Supplier Device PackageSC-89 (SOT-563F)

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