SI1023X-T1-E3
MOSFET 2P-CH 20V 0.37A SC89Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Vishay Siliconix SI1023X-T1-E3 is a TrenchFET® series, 2 P-Channel MOSFET array in an SC-89 (SOT-563F) surface mount package. This device features a continuous drain current of 370mA at 25°C and a drain-to-source voltage of 20V. With a maximum power dissipation of 250mW, it offers a low Rds(on) of 1.2O at 350mA and 4.5V Vgs. The logic-level gate feature and a gate charge of 1.5nC at 4.5V make it suitable for low-voltage, battery-powered applications. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in power management and portable electronics. It is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 370mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 350mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | SC-89 (SOT-563F) |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
