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SI1023X-T1-E3

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SI1023X-T1-E3

MOSFET 2P-CH 20V 0.37A SC89

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Vishay Siliconix SI1023X-T1-E3 is a TrenchFET® series, 2 P-Channel MOSFET array in an SC-89 (SOT-563F) surface mount package. This device features a continuous drain current of 370mA at 25°C and a drain-to-source voltage of 20V. With a maximum power dissipation of 250mW, it offers a low Rds(on) of 1.2O at 350mA and 4.5V Vgs. The logic-level gate feature and a gate charge of 1.5nC at 4.5V make it suitable for low-voltage, battery-powered applications. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in power management and portable electronics. It is supplied in tape and reel packaging.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max250mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C370mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Supplier Device PackageSC-89 (SOT-563F)

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