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SI1016X-T1-GE3

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SI1016X-T1-GE3

MOSFET N/P-CH 20V 0.485A SC89

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Vishay Siliconix SI1016X-T1-GE3 is a TrenchFET® MOSFET array featuring both N-channel and P-channel configurations. This device offers a drain-to-source voltage (Vdss) of 20V and continuous drain current capabilities of 485mA for the N-channel and 370mA for the P-channel, respectively, at 25°C. With a maximum power dissipation of 250mW and a low on-resistance of 700mOhm at 600mA and 4.5V, it is suitable for power management applications. The logic-level gate feature and low gate charge of 0.75nC (max) at 4.5V facilitate efficient switching. Packaged in a surface-mount SC-89 (SOT-563F) and supplied on tape and reel, this MOSFET array finds utility in consumer electronics and portable device designs. The operating temperature range is -55°C to 150°C.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max250mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C485mA, 370mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSC-89 (SOT-563F)

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