SI1016X-T1-GE3
MOSFET N/P-CH 20V 0.485A SC89Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI1016X-T1-GE3 is a TrenchFET® MOSFET array featuring both N-channel and P-channel configurations. This device offers a drain-to-source voltage (Vdss) of 20V and continuous drain current capabilities of 485mA for the N-channel and 370mA for the P-channel, respectively, at 25°C. With a maximum power dissipation of 250mW and a low on-resistance of 700mOhm at 600mA and 4.5V, it is suitable for power management applications. The logic-level gate feature and low gate charge of 0.75nC (max) at 4.5V facilitate efficient switching. Packaged in a surface-mount SC-89 (SOT-563F) and supplied on tape and reel, this MOSFET array finds utility in consumer electronics and portable device designs. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 485mA, 370mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
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