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SI1016X-T1-E3

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SI1016X-T1-E3

MOSFET N/P-CH 20V 0.485A SC89

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Vishay Siliconix SI1016X-T1-E3 is a TrenchFET® series MOSFET array featuring N-channel and P-channel configurations. This component offers a Drain-Source Voltage (Vdss) of 20V, with continuous drain current capabilities of 485mA for the N-channel and 370mA for the P-channel, both specified at 25°C. The device exhibits a maximum On-Resistance (Rds(On)) of 700mOhm at 600mA and 4.5V. Its logic-level gate feature enhances compatibility with lower voltage control signals. With a maximum power dissipation of 250mW and a gate charge (Qg) of 0.75nC at 4.5V, this MOSFET array is suitable for applications requiring efficient switching and power management. The SI1016X-T1-E3 is supplied in a compact SC-89 (SOT-563F) surface-mount package, presented on tape and reel. Its operating temperature range spans from -55°C to 150°C. This component is utilized in various industries, including consumer electronics and portable devices.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max250mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C485mA, 370mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSC-89 (SOT-563F)

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