SI1016X-T1-E3
MOSFET N/P-CH 20V 0.485A SC89Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI1016X-T1-E3 is a TrenchFET® series MOSFET array featuring N-channel and P-channel configurations. This component offers a Drain-Source Voltage (Vdss) of 20V, with continuous drain current capabilities of 485mA for the N-channel and 370mA for the P-channel, both specified at 25°C. The device exhibits a maximum On-Resistance (Rds(On)) of 700mOhm at 600mA and 4.5V. Its logic-level gate feature enhances compatibility with lower voltage control signals. With a maximum power dissipation of 250mW and a gate charge (Qg) of 0.75nC at 4.5V, this MOSFET array is suitable for applications requiring efficient switching and power management. The SI1016X-T1-E3 is supplied in a compact SC-89 (SOT-563F) surface-mount package, presented on tape and reel. Its operating temperature range spans from -55°C to 150°C. This component is utilized in various industries, including consumer electronics and portable devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 485mA, 370mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-89 (SOT-563F) |
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