VS-FC80NA20
MOSFET N-CH 200V 108A SOT227Manufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single FETs, MOSFETs
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Vishay General Semiconductor - Diodes Division's VS-FC80NA20 is an N-Channel Power MOSFET designed for high-power applications. This component features a 200 V drain-source voltage (Vdss) and a continuous drain current (Id) of 108 A at 25°C (Tc), with a maximum power dissipation of 405 W (Tc). The device exhibits a low on-resistance (Rds On) of 14 mOhm at 80 A and 10 V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 161 nC @ 10 V and input capacitance (Ciss) of 10720 pF @ 50 V. The MOSFET is housed in a SOT-227-4, miniBLOC package for chassis mounting, operating across a temperature range of -55°C to 175°C (TJ). This component is suitable for demanding applications in power conversion, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 108A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 405W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 161 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10720 pF @ 50 V |
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