VS-FC420SA10
MOSFET N-CH 100V 435A SOT227Manufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single FETs, MOSFETs
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Vishay General Semiconductor - Diodes Division VS-FC420SA10 is an N-Channel Power MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 435A at 25°C (Tc), with a maximum power dissipation of 652W (Tc). The low on-resistance (Rds On) of 2.15mOhm at 200A and 10V gate drive ensures efficient power transfer. With a typical input capacitance (Ciss) of 17300pF and gate charge (Qg) of 375nC at 10V, it is suitable for demanding switching applications. The SOT-227, miniBLOC package facilitates chassis mounting for effective thermal management. This MOSFET operates across a wide temperature range of -55°C to 175°C (TJ). It finds application in industries such as industrial power supplies, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 435A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.15mOhm @ 200A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 652W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 750µA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 375 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17300 pF @ 25 V |
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