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VS-FC270SA20

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VS-FC270SA20

MOSFET N-CH 200V 287A SOT227

Manufacturer: Vishay General Semiconductor - Diodes Division

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay General Semiconductor - Diodes Division MOSFET, N-Channel, VS-FC270SA20. This device offers a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 287A at 25°C (Tc). With a maximum power dissipation of 937W (Tc) and a low on-resistance of 4.7mOhm at 200A and 10V, this MOSFET is designed for high-power applications. Key parameters include gate charge (Qg) of 250 nC @ 10V and input capacitance (Ciss) of 16500 pF @ 100V. The SOT-227-4, miniBLOC package facilitates chassis mounting for efficient thermal management. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for demanding power conversion and motor control applications within the industrial and automotive sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 54 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C287A (Tc)
Rds On (Max) @ Id, Vgs4.7mOhm @ 200A, 10V
FET Feature-
Power Dissipation (Max)937W (Tc)
Vgs(th) (Max) @ Id4.3V @ 1mA
Supplier Device PackageSOT-227
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds16500 pF @ 100 V

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