VS-FC220SA20
MOSFET N-CH 200V 220A SOT-227Manufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single FETs, MOSFETs
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Vishay General Semiconductor - Diodes Division VS-FC220SA20 is an N-Channel Power MOSFET designed for high-power applications. This component features a maximum drain-source voltage (Vdss) of 200 V and a significant continuous drain current (Id) of 220 A at 25°C. The low on-resistance of 7 mOhm at 150 A and 10 V gate drive ensures efficient power transfer. With a maximum power dissipation of 789 W, this MOSFET is suitable for demanding thermal environments. The VS-FC220SA20 utilizes a robust SOT-227 package for chassis mounting, facilitating effective heat management. Key parameters include a gate charge (Qg) of 350 nC and input capacitance (Ciss) of 21000 pF, both specified at 10 V and 50 V respectively. Operating across a wide temperature range of -55°C to 175°C, this device finds application in power conversion, industrial automation, and electric vehicle systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 150A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 789W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 500µA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 350 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21000 pF @ 50 V |
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