VS-FB190SA10
MOSFET N-CH 100V 190A SOT227Manufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single FETs, MOSFETs
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The Vishay General Semiconductor - Diodes Division VS-FB190SA10 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 190 A at 25°C (Tj). With a maximum power dissipation of 568 W (Tc), it is suitable for chassis mount configurations utilizing the SOT-227 package. The low on-resistance (Rds On) of 6.5 mOhm at 180 A and 10 V gate drive voltage, along with a typical gate charge of 250 nC at 10 V, facilitates efficient switching. The Vishay General Semiconductor - Diodes Division VS-FB190SA10 is utilized in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. It operates across an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tj) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 180A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 568W (Tc) |
| Vgs(th) (Max) @ Id | 4.35V @ 250µA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10700 pF @ 25 V |