FB180SA10
MOSFET N-CH 100V 180A SOT-227Manufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single FETs, MOSFETs
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Vishay General Semiconductor - Diodes Division FB180SA10 is an N-Channel Power MOSFET designed for high-current applications. This HEXFET® device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 180A at 25°C (Tc), with a maximum power dissipation of 480W (Tc). The low on-resistance (Rds On) of 6.5mOhm at 108A and 10V gate drive voltage is achieved through advanced MOSFET technology. Key parameters include a gate charge (Qg) of 380 nC at 10V and input capacitance (Ciss) of 10700 pF at 25V. The SOT-227-4 miniBLOC package allows for efficient chassis mounting and operation across a temperature range of -55°C to 150°C. This component is suitable for demanding applications in industrial power, motor control, and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 108A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10700 pF @ 25 V |
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