Home

Products

Discrete Semiconductor Products

Diodes

Rectifiers

Single Diodes

VS-HFA04TB60-N3

Banner
productimage

VS-HFA04TB60-N3

DIODE GEN PURP 600V 4A TO220AC

Manufacturer: Vishay General Semiconductor - Diodes Division

Categories: Single Diodes

Quality Control: Learn More

The Vishay General Semiconductor - Diodes Division VS-HFA04TB60-N3 is a fast recovery general-purpose diode. This component features a maximum DC reverse voltage of 600V and an average rectified current capability of 4A. The forward voltage drop at 4A is 1.8V (maximum). With a reverse leakage current of 3 µA at 600V, it offers efficient operation. The reverse recovery time (trr) is specified at 42 ns, classifying it within the fast recovery speed category. This through-hole mounted diode comes in a TO-220AC package and is suitable for applications in power supplies, motor control, and industrial automation. The operating junction temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)42 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)4A
Supplier Device PackageTO-220AC
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 4 A
Current - Reverse Leakage @ Vr3 µA @ 600 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BYWB29-150HE3_A/P

DIODE GEN PURP 150V 8A TO263AB

product image
SS1FL3HM3/I

DIODE SCHOTTKY 30V 1A DO219AB

product image
VS-2EYH02-M3/I

DIODE GEN PURP 200V 2A SLIMSMAW