VS-C20CP07L-M3
DIODE SIL CARB 650V 10A TO220ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division VS-C20CP07L-M3 is a Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion. This through-hole component, housed in a TO-220AC package, offers a DC reverse voltage rating of 650 V and an average rectified current capability of 10 A. Key electrical characteristics include a forward voltage (Vf) of 1.8 V at 10 A and a reverse leakage current of 55 µA at 650 V. The diode exhibits a junction capacitance of 430 pF at 1 V and 1 MHz. Operating across a junction temperature range of -55°C to 175°C, it falls within the fast recovery speed category, typically less than 500 ns for currents greater than 200 mA. This component is suitable for applications in power supplies, solar inverters, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 430pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 55 µA @ 650 V |
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