VS-C12ET07T-M3
DIODE SIL CARB 650V 12A TO220ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division VS-C12ET07T-M3 is a 650V Silicon Carbide Schottky diode with a 12A average rectified current rating. This through-hole component, packaged in a TO-220AC, exhibits a maximum forward voltage of 1.7V at 12A and a reverse leakage of 65 µA at 650V. Its junction capacitance is specified at 515pF at 1V and 1MHz. Operating across a temperature range of -55°C to 175°C, this diode offers fast recovery characteristics. It is suitable for applications in power factor correction, switch mode power supplies, and electric vehicle charging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 515pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 65 µA @ 650 V |
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