VS-C04ET07T-M3
DIODE SIL CARB 650V 4A TO220ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division VS-C04ET07T-M3 is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, packaged in a TO-220AC, offers a 650V reverse voltage capability and a 4A average rectified current. Key electrical specifications include a forward voltage drop (Vf) of 1.7V at 4A and a reverse leakage current of 25 µA at 650V. The diode exhibits a capacitance of 170pF at 1V and 1MHz. Operating across a junction temperature range of -55°C to 175°C, this device is suitable for power factor correction, switch-mode power supplies, and photovoltaic inverters in the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 170pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
Request a Quote
Clients Also Buy
V30KM120-M3/H
DIODE SCHOTTKY 120V 4.1A FLATPAK
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
