VS-8EWS16SPBF
DIODE GEN PURP 1.6KV 8A TO252Manufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division VS-8EWS16SPBF is a general-purpose diode designed for high-voltage applications. This through-hole component features a maximum DC reverse voltage of 1600 V and an average rectified forward current (Io) of 8 A. The forward voltage (Vf) is rated at a maximum of 1.1 V at 8 A, with a reverse leakage current of 50 µA at 1600 V. The device utilizes standard recovery technology with a recovery time greater than 500 ns for currents over 200 mA. Packaged in a TO-252AA (DPAK) surface-mount configuration, it operates within a junction temperature range of -40°C to 150°C. This diode is suitable for applications in power supplies, industrial controls, and automotive systems requiring robust voltage blocking capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-252AA (DPAK) |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1600 V |
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