VS-8EWF12STRPBF
DIODE GEN PURP 1.2KV 8A D-PAKManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division VS-8EWF12STRPBF is a general-purpose diode designed for high-voltage applications. This surface-mount device, housed in a TO-252AA (DPAK) package, features a maximum DC reverse voltage of 1200 V and an average rectified forward current of 8 A. The diode exhibits a forward voltage drop of 1.3 V at 8 A and a reverse leakage current of 100 µA at its maximum reverse voltage. With a reverse recovery time of 270 ns, it is classified as a fast recovery diode. Its operating temperature range is -40°C to 150°C. This component is commonly utilized in power supply rectification, inrush current limiting, and general high-voltage switching applications across industrial and automotive sectors. The VS-8EWF12STRPBF is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 270 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-252AA (DPAK) |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 8 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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