VS-20ETF12SPBF
DIODE GEN PURP 1.2KV 20A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division VS-20ETF12SPBF is a general-purpose diode designed for applications requiring high voltage and current handling. This device features a maximum DC reverse voltage of 1200 V and an average rectified forward current of 20 A. The VS-20ETF12SPBF exhibits a forward voltage drop of 1.31 V at 20 A and a reverse leakage current of 100 µA at its maximum reverse voltage. With a reverse recovery time of 400 ns, it is classified as a fast recovery diode. The component is housed in a TO-263AB (D2PAK) surface-mount package, facilitating integration into printed circuit boards. Its operating junction temperature range is -40°C to 150°C. This diode is suitable for use in power supply rectification, automotive, industrial, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 400 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.31 V @ 20 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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