VS-10ETF12SPBF
DIODE GEN PURP 1.2KV 10A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division VS-10ETF12SPBF is a general-purpose diode featuring a 1200 V reverse voltage rating and a 10 A average rectified current capability. This device utilizes a TO-263AB (D2PAK) surface-mount package, facilitating efficient thermal management in demanding applications. Its fast recovery characteristic, with a typical reverse recovery time of 310 ns, makes it suitable for power switching circuits. The diode exhibits a forward voltage drop of 1.33 V at 10 A and a reverse leakage current of 100 µA at 1000 V. Operating across a junction temperature range of -40°C to 150°C, the VS-10ETF12SPBF finds application in power supplies, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 310 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.33 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1000 V |
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