US1BHE3/61T
DIODE GEN PURP 100V 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division US1BHE3-61T is a general-purpose diode with a repetitive peak reverse voltage rating of 100V and a continuous average rectified forward current capability of 1A. This device features a maximum forward voltage drop of 1V at 1A and a reverse leakage current of 10 µA at 100V. The capacitance at 4V and 1MHz is 15pF. Engineered for surface mount applications, it is housed in a DO-214AC (SMA) package. The reverse recovery time (trr) is specified at 50 ns, classifying it as a fast recovery diode. Its operational temperature range spans from -55°C to 150°C. This component is commonly utilized in power supply rectification and general-purpose switching applications across various industrial and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
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