US1AHE3/61T
DIODE GEN PURP 50V 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division US1AHE3-61T is a general-purpose, fast recovery diode designed for surface mount applications. This component features a maximum repetitive peak reverse voltage of 50V and a continuous average rectified current of 1A. The forward voltage drop at 1A is a maximum of 1V, with a reverse leakage current of 10 µA at 50V. With a reverse recovery time (trr) of 50 ns, it offers efficient rectification. The device is packaged in a DO-214AC (SMA) case, supplied on tape and reel. Typical capacitance is 15pF at 4V and 1MHz. Operating junction temperature ranges from -55°C to 150°C. This diode is commonly utilized in power supply rectification, switching power supplies, and general industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
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