UGB8JT-E3/81
DIODE GEN PURP 600V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division UGB8JT-E3-81 is a high-performance general-purpose diode designed for demanding applications. This surface-mount device, housed in a TO-263AB (D2PAK) package, features a 600 V reverse voltage rating and an 8 A average rectified forward current capability. Its fast recovery time of 50 ns (trr) makes it suitable for power supply circuits, inverters, and motor control systems. The diode exhibits a maximum forward voltage (Vf) of 1.75 V at 8 A and a low reverse leakage current of 30 µA at 600 V. Operating across a junction temperature range of -55°C to 150°C, this Vishay General Semiconductor component is a reliable choice for industrial power conversion and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 8 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 600 V |
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