UGB8DT-E3/45
DIODE GEN PURP 200V 8A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division UGB8DT-E3-45 is a fast recovery diode designed for general-purpose applications. This surface mount component, housed in a TO-263AB (D2PAK) package, offers a repetitive peak reverse voltage of 200V and an average rectified forward current handling capability of 8A. Featuring a forward voltage drop of 1V at 8A and a reverse leakage current of 10 µA at 200V, the UGB8DT-E3-45 exhibits a reverse recovery time of 30 ns. Its robust construction allows for operation across a wide temperature range from -55°C to 150°C. This diode is suitable for use in power supplies, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
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