UGB5JT-E3/45
DIODE GEN PURP 600V 5A TO263ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division UGB5JT-E3-45 is a general-purpose diode designed for demanding applications. This component features a 600 V reverse voltage (Vr) and a 5 A average rectified forward current (Io). The forward voltage drop (Vf) is a maximum of 1.75 V at 5 A. With a reverse leakage current of 30 µA at 600 V and a fast reverse recovery time (trr) of 50 ns, it is suitable for power supply rectification and switching power applications. The UGB5JT-E3-45 is packaged in a TO-263AB (D2PAK) surface-mount configuration, offering efficient thermal performance. Its operational temperature range spans from -55°C to 150°C. This Vishay diode is commonly utilized in industrial power control and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 5 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 600 V |
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