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UG8JT-E3/45

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UG8JT-E3/45

DIODE GEN PURP 600V 8A TO220AC

Manufacturer: Vishay General Semiconductor - Diodes Division

Categories: Single Diodes

Quality Control: Learn More

Vishay General Semiconductor - Diodes Division UG8JT-E3-45 is a general-purpose diode with a 600 V reverse voltage rating and an 8 A average rectified forward current (Io). This through-hole component features a TO-220AC package and a forward voltage drop (Vf) of 1.75 V at 8 A. The device exhibits a reverse leakage current of 30 µA at 600 V and a typical reverse recovery time (trr) of 50 ns, classifying it as a fast recovery diode. Operating across a junction temperature range of -55°C to 150°C, this Vishay General Semiconductor diode is suitable for applications in power supplies, industrial controls, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)50 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)8A
Supplier Device PackageTO-220AC
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.75 V @ 8 A
Current - Reverse Leakage @ Vr30 µA @ 600 V

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