S5KHE3/9AT
DIODE GEN PURP 800V 5A DO214ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division S5KHE3-9AT is an 800V, 5A general-purpose diode featuring a standard recovery speed with a reverse recovery time (trr) of 2.5 µs. This component, housed in a DO-214AB (SMC) surface mount package, offers a forward voltage drop of 1.15V at 5A and a reverse leakage current of 10 µA at 800V. Its low junction capacitance is 40pF at 4V and 1MHz. Qualified to AEC-Q101 for automotive applications, it operates within a junction temperature range of -55°C to 150°C. The S5KHE3-9AT is suitable for demanding applications within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 40pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
| Qualification | AEC-Q101 |
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