S5BHE3/9AT
DIODE GEN PURP 100V 5A DO214ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division S5BHE3-9AT is a general-purpose diode with a maximum repetitive reverse voltage of 100V. This AEC-Q101 qualified component features a 5A average rectified forward current (Io) and a forward voltage (Vf) of 1.15V at 5A. The diode exhibits a reverse leakage current of 10 µA at 100V and a capacitance of 40pF at 4V and 1MHz. With a standard recovery speed exceeding 500ns, the S5BHE3-9AT is housed in a DO-214AB (SMC) package, suitable for surface mounting. Its operating junction temperature range is -55°C to 150°C. This component is commonly utilized in automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 40pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
VS-2EYH02-M3/I
DIODE GEN PURP 200V 2A SLIMSMAW
