S3MHE3/9AT
DIODE GEN PURP 1KV 3A DO214ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division S3MHE3-9AT is a general-purpose diode designed for robust performance in demanding applications. This component features a 1000V reverse voltage (Vr) and a 3A average rectified current (Io). With a standard recovery speed exceeding 500ns and a forward voltage drop (Vf) of 1.15V at 2.5A, it offers reliable rectification. The device exhibits a low reverse leakage current of 10 µA at 1000 V and a junction capacitance of 60pF at 4V and 1MHz. Qualified to AEC-Q101 standards with an automotive grade, the S3MHE3-9AT is suitable for automotive, industrial, and power supply applications. It is supplied in a DO-214AB (SMC) surface mount package, delivered on tape and reel. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2.5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Qualification | AEC-Q101 |
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