S3MHE3/57T
DIODE GEN PURP 1KV 3A DO214ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division S3MHE3-57T is a general-purpose diode designed for demanding applications. This AEC-Q101 qualified component offers a 1000V DC reverse voltage rating and a 3A average rectified forward current. Its surface mount DO-214AB (SMC) package ensures efficient thermal management and compatibility with automated assembly processes. Key specifications include a forward voltage drop of 1.15V at 2.5A and a reverse leakage current of 10µA at 1000V. The diode exhibits a capacitance of 60pF at 4V and 1MHz, with a standard recovery time exceeding 500ns. Operating across a junction temperature range of -55°C to 150°C, this device is suitable for automotive and industrial power management circuits requiring robust rectification and voltage blocking capabilities. The S3MHE3-57T is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2.5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Qualification | AEC-Q101 |
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