S3JHE3/57T
DIODE GEN PURP 600V 3A DO214ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division S3JHE3-57T is a general-purpose diode with a maximum reverse voltage of 600 V and an average rectified current handling capability of 3 A. This surface-mount component, housed in a DO-214AB (SMC) package, features a forward voltage drop of 1.15 V at 2.5 A. Its low reverse leakage current is 10 µA at 600 V. The diode exhibits a reverse recovery time (trr) of 2.5 µs, classifying it as standard recovery. Capacitance is specified at 60 pF at 4 V and 1 MHz. Qualified to AEC-Q101 and designed for automotive applications, it operates within a junction temperature range of -55°C to 150°C. The Vishay General Semiconductor - Diodes Division S3JHE3-57T is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2.5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | AEC-Q101 |
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