S3G-E3/51T
DIODE GEN PURP 400V 3A DO214ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division S3G-E3-51T is a general-purpose diode designed for high-reliability applications. This standard recovery diode features a maximum DC reverse voltage (Vr) of 400 V and an average rectified forward current (Io) of 3 A. With a typical forward voltage (Vf) of 1.15 V at 2.5 A and a reverse leakage current of just 10 µA at 400 V, it offers efficient rectification. The device has a specified reverse recovery time (trr) of 2.5 µs. Housed in a DO-214AB (SMC) surface mount package, it operates across a junction temperature range of -55°C to 150°C. The capacitance at 4V and 1MHz is 60pF. This component is commonly utilized in power supply rectification and general switching applications within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2.5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 400 V |
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