S3BHE3/57T
DIODE GEN PURP 100V 3A DO214ABManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
Quality Control: Learn More
Vishay General Semiconductor - Diodes Division presents the S3BHE3-57T, a general-purpose rectifier diode. This component features a 100V reverse voltage rating and a 3A average rectified forward current capacity. The S3BHE3-57T utilizes standard recovery technology with a typical reverse recovery time of 2.5µs. It is supplied in a DO-214AB (SMC) surface-mount package, suitable for automated assembly. The diode exhibits a maximum forward voltage drop of 1.15V at 2.5A and a reverse leakage of 10µA at 100V. With a junction operating temperature range of -55°C to 150°C and AEC-Q101 qualification, this device is engineered for demanding automotive applications. The capacitance at 4V and 1MHz is 60pF. The S3BHE3-57T is available in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2.5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2.5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
V30KM120-M3/H
DIODE SCHOTTKY 120V 4.1A FLATPAK
BYWB29-150HE3_A/P
DIODE GEN PURP 150V 8A TO263AB
SS1FL3HM3/I
DIODE SCHOTTKY 30V 1A DO219AB
