S1KHE3/5AT
DIODE GEN PURP 800V 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division presents the S1KHE3-5AT, a general-purpose diode designed for demanding applications. This Through Hole device features a maximum DC reverse voltage of 800 V and an average rectified forward current handling capability of 1 A. With a forward voltage drop of 1.1 V at 1 A and a reverse leakage current of 5 µA at 800 V, it offers efficient rectification. The diode exhibits a reverse recovery time of 1.8 µs, classifying it as standard speed recovery. Its capacitance at 4 V and 1 MHz is rated at 12 pF. The S1KHE3-5AT is housed in a DO-214AC (SMA) package for surface mounting and operates across a junction temperature range of -55°C to 150°C. This component finds application in power supplies, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.8 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
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