S1J-E3/51T
DIODE GEN PURP 600V 1A DO214ACManufacturer: Vishay General Semiconductor - Diodes Division
Categories: Single Diodes
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Vishay General Semiconductor - Diodes Division S1J-E3-51T is a general-purpose diode designed for efficient rectification. This component offers a peak repetitive reverse voltage of 600V and a continuous average rectified forward current capability of 1A. It features a low forward voltage drop of 1.1V at 1A, contributing to reduced power dissipation. The reverse leakage current is maintained at a minimal 1 µA at 600V. With a standard recovery time (trr) of 1.8 µs, this diode is suitable for applications requiring moderate switching speeds. Its compact DO-214AC (SMA) package facilitates surface mounting, making it ideal for integration into compact electronic designs. This device is commonly utilized in power supplies, lighting controls, and general rectification circuits across various industrial and consumer electronics sectors. The operating junction temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.8 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
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